. .

Antoni ROGALSKI, Ph.D., D.Sc.


Ordinary Member PAN
Professor of the Institute of Applied Physics
Military University of Technology
2 Kaliskiego Str., 00-908 Warsaw, Poland
Tel./Fax. (48) 22 - 683 9109
rogan@wat.edu.pl

Contributed papers

  1. M.J. Małachowski, A. Rogalski, “Technologia i własności fotoprzewodzącego detektora promieniowania podczerwonego na GaAs,” Biuletyn WAT XXII, Nr 3, 111-114 (1973).
  2. J. Rybiński, A. Rogalski, J. Kilias, “Technologia i właściwości tensometryczne cienkich warstw Pb1-xSnxTe. Fizyka Cienkich Warstw. Część I”. Ogólnopolskie Sympozjum Szczyrk 1973, 151-156, PWN Warszawa (1975).
  3. J. Kilias, A. Rogalski, J. Rybiński, “Technologia i własności elektryczne cienkich warstw Pb1-xSnxTe.” Biuletyn WAT XXIII, Nr 2, 101-105 (1974).
  4. J. Perczyński, A. Rogalski, J. Rybiński, “Zastosowanie warstw Pb1-xSnxTe w tensometrze,” Biuletyn WAT XXIII, Nr 12, 105-108 (1974).
  5. A. Rogalski, “Właściwości elektryczne cienkich warstw Pb1-xSnxTe,” Biuletyn WAT XXIV, Nr 5, 59-65 (1975).
  6. A. Rogalski, J. Rybiński, W. Włodarski, “Własności piezoelektryczne cienkich warstw Pb1-xSnxTe,” Fizyka Cienkich Warstw. II Ogólnopolskie Sympozjumn Szczyrk 1975, 510-514, PWN Warszawa 1977.
  7. A. Rogalski, “Właściwości optyczne warstw Pb1-xSnxTe w temperaturze pokojowej,” Biuletyn WAT XXV, Nr 4, 71-78 (1976).
  8. E. Igras, A. Rogalski, “Prawie równowagowy wzrost warstw Pb1-xSnxTe,” Biuletyn WAT XXV, Nr 9, 63-70 (1976).
  9. A. Rogalski, J. Rybiński, W. Włodarski, “Possibility of application of thin Pb1-xSnxTe films as the mechanical stress transducers,” Electron Technology 9, Nr 3/4, 71-82 (1976).
  10. E. Igras, A. Rogalski, “Electrical and photoelectrical properties of (n)PbTe(p) Pb0.82Sn0.18Te heterojunctions,” Electron Technology 10, Nr 4, 71-79 (1977).
  11. E. Igras, A. Rogalski, “Właściwości elektryczne i fotoelektryczne heterozłącz (n)PbTe-(p) Pb0.82Sn0.18Te,” Biuletyn WAT XXVI, Nr 5, 113-121 (1977).
  12. A. Rogalski, J. Rybiński, M.J. Małachowski, “Electrical and piezoelectrical properties of Pb1-xSnxTe thin films,” Vaccum 27, Nr 4, 317-319 (1977).
  13. W. Bedełek, M. J. Małachowski, E. Nowinowski-Kruszelnicki, A. Rogalski, J. Żmija, “Fotonapięcie w cienkowarstwowym układzie heterozłączowym metal-CdS-SnO2Biuletyn WAT XXVII, Nr 5, 167-176 (1978).
  14. D. Borkowska, A. Rogalski, H. Ziencik, “Warstwy PbTe otrzymywane zmodyfikowaną techniką «gorącego kanału»” Biuletyn WAT XXVII, Nr 10, 83-92 (1978).
  15. E. Igras, M.J. Małachowski, A. Rogalski, “Pb1-xSnxTe photovoltaic detectors prepared by hot-wall evaporation technique,” Proc. 8 Internat. Symp. of the IMEKO Technical Committee on Photon Detectors, 419-429, Praha (1978).
  16. A. Rogalski, J. Rybiński, “Piezoresistance effect in Pb0.82Sn0.18Te films,” Electron Technology 11, Nr 1/2, 75-83 (1978); Biuletyn WAT XXVI, Nr 10, 117-125 (1977).
  17. A. Rogalski, H. Ziencik, “The preparation, structure and properties of Pb0.82Sn0.18Te films obtained by modified hot-wall evaporation technique,” Electron Technology 11, Nr 1/2, 69-74 (1978).
  18. A. Rogalski, H. Ziencik, “Technologia, struktura i właściwości warstw Pb0.82Sn0.18Te otrzymywanych zmodyfikowaną techniką «gorącego kanału»” Biuletyn WAT XXVI, Nr 10, 111-116 (1977).
  19. A. Rogalski, “Peculiarities of the Hall constant of Pb0.82Sn0.18Te layers on mica substrates,” Materials Science 5, Nr 1-2, 17-25 (1979).
  20. M. J. Małachowski, A. Rogalski, “Effect of hydrostatic pressure on the properties of Pb0.82Sn0.18Te films,” Materials Science 5, 27-34 (1979).
  21. A. Rogalski, “Surface transport of carriers in epitaxial Pb0.82Sn0.18Te films at temperature 77K,” Acta Physica Polonica A55, 45-53 (1979).
  22. A. Rogalski, “Powierzchniowy transport nośników w epitaksjalnych warstwach Pb0.82Sn0.18Te w temperaturze 77K,” Biuletyn WAT XXVII, Nr 4, 149-157 (1978).
  23. A. Rogalski, “Pb1-xSnxTe photovoltaic detectors for the range of atmospheric window 8-14 µm prepared by a modyfied hot-wall evaporation technique” Electron Technology 12, Nr 4, 99-107 (1979).
  24. A. Rogalski, “Detektory fotowoltaiczne PbSnTe okna atmosferycznego 8-14 µm otrzymywane zmodyfikowaną techniką «gorącego kanału»” Biuletyn WAT XXVIII, Nr 8, 181-189 (1979).
  25. A. Rogalski, “Właściwości optyczne i strukturalne warstw PbSnTe otrzymywanych techniką HWE,” Szkoła Fizyki Związków Półprzewodnikowych. Jaszowiec 1979, Prace IF PAN, Nr 82, pp. 154-159, Ossolineum, Wrocław (1981).
  26. A. Rogalski, “n-PbTe/p+-PbSnTe heterojunctions prepared by a modified hot-wall technique,” Thin Solid Films 67, 179-186 (1980).
  27. A. Rogalski, “Detectivity limits for PbTe photovoltaic detectors,” Infrared Physics 20, 223-229 (1980).
  28. A. Rogalski, “Graniczne parametry detekcyjne fotodiod PbTe,” Biuletyn WAT XXIX, Nr 5, 71-81 (1980).
  29. A. Rogalski, “Influence of air on the electrical properties of Pb1-xSnxTe layers on a mica substrate,” Thin Solid Fims 74, 59-68 (1980).
  30. A. Rogalski, “Wpływ powietrza na własności elektryczne warstw Pb1-xSnxTe na podłożu mikowym” Biuletyn WAT XXIX, Nr 8, 33-44 (1980).
  31. A. Rogalski, J. Rutkowski,”Temperature dependence of the RoA product for photovoltaic PbTe detectors,” Optica Applicata 10, Nr 4, 435-443 (1980).
  32. A. Rogalski, J. Rutkowski, “Temperaturowa zależność iloczynu RoA detektorów fotowoltaicznych PbTe” Biuletyn WAT XXIX, Nr 8, 45-54 (1980).
  33. M. Grudzień, A. Rogalski, “The Fermi level in Pb1-xSnxTe, Pb1-xSnxTe and PbS1-xSex,” Acta Physica Applicata, A58, 765-771 (1980).
  34. W. Larkowski, A. Rogalski, “Graniczne parametry fotodiod PbSnTe,” Biuletyn WAT XXX, Nr 1, 91-98 (1981).
  35. M. Grudzień, A. Rogalski, “Photovoltaic detectors Pb1-xSnxTe (0≤x≤0.25). Minority carrier lifetimes. Resistance-area product,” Infrared Physics 21, 1-8 (1981).
  36. M. Grudzień, A. Rogalski, “Detektory fotowoltaiczne Pb1-xSnxTe (0≤x≤0.25). Czas życia nośników. Iloczyn RoA,” Biuletyn WAT XXIX, Nr 10, 137-148 (1980).
  37. W. Kaszuba, A. Rogalski, “The intrinsic carrier concentration in Pb1-xSnxTe, Pb1-xSnxSe and PbS1-xSex,” Acta Physica Polonica A59, 397-402 (1981).
  38. W. Kaszuba, A. Rogalski, “Koncentracja samoistna w Pb1-xSnxTe, Pb1-xSnxSe i PbS1-xSex,” Biuletyn WAT XXX, Nr 1, 73-80 (1981).
  39. A. Rogalski, J. Rutkowski, “RoA product for PbS and PbSe abrupt p-n junction,” Optica Applicata 9, 365-370 (1981).
  40. A. Rogalski, J. Rutkowski, “Temperature dependence of the RoA product for lead chalcogenide photovoltaic detectors,” Infrared Physics 21, 191-199 (1981).
  41. A. Rogalski, W. Kaszuba, “Photovoltaic detectors Pb1-xSnxSe (0≤x≤0.12). Minority carrier lifetimes. Resistance-area product,” Infrared Physics 21, 251-259 (1981).
  42. W. Larkowski, A. Rogalski, “Spectral responses of the n-PbTe/p-Pb1-xSnxTe heterojunctions,” Optica Applicata 12, 205-217 (1982).
  43. W. Larkowski, A. Rogalski, “Charakterystyki widmowe heterozłącz n-PbTe/p-Pb1-xSnxTe,” Biuletyn WAT 11, 67-79 (1981).
  44. A. Rogalski, J. Rutkowski, “Effect of structure on the quantum efficiency and RoA product of lead-tin chalcogenide photodiodes,” Infared Physics 22, 199-208 (1982).
  45. A. Rogalski, J. Rutkowski, “Wpływ konstrukcji na wydajność kwantową i iloczyn RoA fotodiod z chalkogenidków ołowiu i cyny,” Biuletyn WAT XXX, Nr 11, 53-65 (1981).
  46. A. Rogalski, W. Kaszuba, W. Larkowski, “PbTe photodiodes prepared by the hot-wall evaporation technique,” Thin Solid Films 103, 343-353 (1983).
  47. A. Rogalski, W. Kaszuba, “PbS1-xSex (0≤x≤1) photovoltaic detectors. Carrier lifetimes and resistance-area product,” Infrared Physics 25, 23-32 (1983).
  48. K. Jóźwikowski, J. Piotrowski, A. Rogalski, “Graniczne parametry fotodiod z InSb,” Biuletyn WAT XXXIII, Nr 3, s. 73-83 (1984).
  49. J. Rutkowski, A. Rogalski, W. Larkowski, “Fotodiody z PbSnTe otrzymywane metodą dyfuzji kadmu,” Biuletyn WAT XXXIII, Nr 9, 97-109 (1984).
  50. A. Rogalski, “Energia Fermiego w półprzewodnikach o pasmach nieparabolicznych,” Biuletyn WAT XXXIII, Nr 9, 89-95 (1984).
  51. A. Rogalski, Z. Orman, “Band-to-band recombination in InAs1-xSbx,” Infrared Physics 25, 551-560 (1985).
  52. A. Rogalski, Z. Orman, “Międzypasmowa rekombinacja nośników w InAs1-xSbx,” Biuletyn WAT XXXIV, Nr 1, 39-50 (1985).
  53. W. Larkowski, A. Rogalski, J. Rutkowski, “Mesa Cd-diffused Pb0.8Sn0.2Te photodiodes,” Acta Physica Polonica A67, 195-198 (1985).
  54. W. Larkowski, A. Rogalski, J. Rutkowski, “Charakterystyki widmowe fotodiod z Pb1-xSnxTe,” Biuletyn WAT XXXIV, Nr 1, 39-50 (1985).
  55. A. Rogalski, W. Larkowski, “Comparison of photodiodes for the 3-5.5 µm and 8-14 µm spectral regions,” Electron Technology 18, Nr 3/4, 55-69 (1985).
  56. A. Rogalski, W. Larkowski, “Porównanie fotodiod zakresu 3-5.5 µm i 8-14 µm wykonanych z półprzewodników o wąskiej przerwie energetycznej,” Biuletyn WAT XXXIV, Nr 5, 55″66 (1985).
  57. J. Piotrowski, A. Rogalski, “A simple method of evaluating the performance of near-background-limited photodiodes,” J. Technical Physics 26, 55-60 (1985).
  58. K. Jóźwikowski, Z. Orman, A. Rogalski, “On the performance of non-cooled (In,As)Sb photoelectromagnetic detectors for 10.6 µm radiation,” Phys. Stat. Sol. (a) 91, 745-751 (1985).
  59. K. Jóźwikowski, Z. Orman, A. Rogalski, “Analiza parametrów niechłodzonych detektorów fotomagnetoelektrycznych z InAs0.35Sb0.65,” Biuletyn WAT XXXV, Nr 1, 17-26 (1986).
  60. Z. Orman, A. Rogalski, “Calculation of the intrinsic carrier concentration in InAs1-xSbx,” Phys. Stat. Sol. (b) 135, K85-88 (1986).
  61. Z. Orman, J. Piotrowski, A. Rogalski, “Właściwości fotodiod z InSb otrzymanych metodą dyfuzji kadmu,” Biuletyn WAT XXXV, Nr 9, 61-73 (1986).
  62. W. Larkowski, A. Rogalski, “High-performance 8-14 µm PbSnTe Schottky barrier photodiodes,” Optica Applicata 16, 221-229 (1986).
  63. A. Rogalski, “Band-to-band recombination in GaxIn1-xSb,” Infrared Physics 27, 353-360 (1987).
  64. J. Piotrowski, A. Rogalski, “Detektory promieniowania podczerwonego w technice zobrazowania termalnego,” VIII Szkoła Fizyki i Zastosowań Monokryształów i Materiałów Ciekłokrystalicznych, Jurata, 1987.
  65. T. Niedziela, A. Rogalski, “Rekombinacja międzypasmowa nośników w Hg1-xZnxTe,” VIII Szkoła Fizyki i Zastosowań Monokryształów i Materiałów Ciekłokrystalicznych, Jurata 1987.
  66. K. Jóźwikowski, A. Rogalski, “Intrinsic carrier concentrations and effective masses in the potential infrared detector material, Hg1-xZnxTe,” Infrared Physics 28, 101-107 (1988).
  67. A. Rogalski, “Analysis of the RoA product in n+-p Hg1-xCdxTe photodiodes,” Infrared Physics 28, 139-153 (1988).
  68. K. Jóźwikowski, Z. Orman, A. Rogalski, “Analiza parametrów niechłodzonych fotorezystorów z InAs0.35Sb0.65,” Biuletyn WAT XXXVII, Nr 11, 13-20 (1988).
  69. T. Niedziela, A. Rogalski, J. Piotrowski, “Calculation of the carrier lifetime in Hg1-xZnxTe,” Infrared Physics 28, 311-319 (1988).
  70. A. Rogalski, K. Jóźwikowski, “Intrinsic carrier concentration and effective masses in InAs1-xSbx,” Infrared Physics 29, 35-42 (1988).
  71. M.J. Małachowski, J. Piotrowski, A. Rogalski, “Influence of dislocations on the performance of Hg1-xCdxTe graded gap photoresistors,” Infrared Physics 28, 279-286 (1988).
  72. J. Piotrowski, A. Rogalski, “Detektory podczerwieni dla urządzeń zobrazowania termalnego,” VI Szkoła Fizyka dla Przemysłu, 63-76, PTF, Instytut Politechniki Śląskiej, Gliwice, 1989.
  73. A. Rogalski, “Intrinsic infrared detectors,” Seminar on Modern Epitaxy Technologies, pp. 111-138, November 1-3, Plovdiv, 1988.
  74. J. Piotrowski, A. Rogalski, “Intrinsic infrared detectors,” The Third Polish Conference on Surface Physics, Zakopane, 1988.
  75. A. Maciak, J. Piotrowski, A. Rogalski, “Recombination mechanisms in narrow band gap Hg1-xZnxTe (x≈0.12) at high temperature,” The Third Polish Conference on Surface Physics, Zakopane, 1988.
  76. A. Maciak, J. Piotrowski, A. Rogalski, “Auger-limited carrier lifetime in HgZnTe ambient temperature 10.6 µm photoresistors,” Infrared Physics 29, 149-154 (1989).
  77. A. Rogalski, K. Jóźwikowski, “The intrinsic carrier concentration in Pb1-xSnxTe, Pb1-xSnxSe and PbS1-xSex,” Phys. Stat. Sol. (b) 111, 559-565 (1989).
  78. M.J. Małachowski, J. Piotrowski, A. Rogalski, “Influence of dislocations on the performance of 3 to 5 µm Hg1-xCdxTe graded gap photoresistors,” Phys. Stat. Sol. (a) 113, 467-476 (1989).
  79. A. Rogalski, J. Rutkowski, “The performance of Hg1-xMnxTe photodiodes,” Infrared Physics 29, 887-893 (1989).
  80. M. Małachowski, A. Rogalski, “Fotorezystory z Hg1-xCdxTe chłodzone termoelektrycznie,” Biuletyn WAT XXXVII, Nr 7, 75-83 (1989).
  81. A. Rogalski, J. Rutkowski, K. Jóźwikowski, J. Piotrowski, Z. Nowak, “The performance of Hg1-xZnxTe photodiodes,” Appl. Phys. A50, 379-384 (1990).
  82. K. Jóźwikowski, A. Rogalski, J. Piotrowski, “On the performance of Hg1-xZnxTe photoresistors,” Acta Physica Polonica A77, 359-362 (1990).
  83. A. Rogalski, J. Piotrowski, J. Gronkowski, “A modyfied hot wall epitaxy technique for the growth of CdTe and Hg1-xCdxTe epitaxial layers,” Thin Solid Films 191, 239-245 (1990).
  84. A. Rogalski, K. Jóźwikowski, “Intrinsic carrier concentration and effective masses in Hg1-xMnxTe,” Phys. Stat. Sol. (a) 122, K39-K43 (1990).
  85. T. Niedziela, A. Rogalski, J. Rutkowski, “Hg1-xMnxTe photodiodes: carrier lifetimes and resistance-area product,” Electron Technology 22, Nr 1/4, 63-80 (1990).
  86. K. Jóźwikowski, A. Rogalski, J. Piotrowski, “Performance of Hg1-xZnxTe photoresistors,” Electron Technology 22, Nr 1/4, 93-104 (1990).
  87. A. Jóźwikowska, K. Jóźwikowski, A. Rogalski, “Performance of mercury cadmium telluride photoconductive detectors,” Infrared Physics 31, 543-554 (1991).
  88. A. Jóźwikowska, K. Jóźwikowski, A. Rogalski, “Wpływ kontaktów blokujących na parametry fotorezystorów z CdxHg1-xTe,” Biuletyn WAT XL, Nr 12, 17-31 (1991).
  89. A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, J. Rutkowski, “Performance of p+-n HgCdTe photodiodes,” Infrared Physics 33, 463-473 (1992).
  90. A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, J. Rutkowski, “Performance of p+-n HgCdTe photodiodes,” Opto-Electronics Review Nr 1, 35-38 (1992).
  91. A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, J. Rutkowski, “Performance of p+-n HgCdTe photodiodes,” Semicond. Sci. Technol. 8, S289-S292 (1993).
  92. A. Rogalski, “Intrinsic carrier concentration and effective masses in Hg1-xMnxTe” Proc. SPIE 1512, 189-194 (1991).
  93. A. Jóźwikowska, K. Jóźwikowski, A. Rogalski, “Performance of mercury cadmium telluride photoconductive detectors,” Infrared Physics 31, 543-554 (1991).
  94. A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, J. Rutkowski, “Performance of p+-n HgCdTe photodiodes,” Infrared Physics 33, 463-473 (1992).
  95. J. Rutkowski, A. Rogalski, “Arsenic diffused p+-n HgCdTe photodiodes,” Proc. SPIE 1845, 171-175 (1992).
  96. F.F. Sizov, A. Rogalski, “Quantum well infrared optoelectronic devices,” Proc. SPIE 1845, 61-70 (1992).
  97. A. Rogalski, “New ternary alloy systems for infrared detectors,” Proc. SPIE 1845, 52-61 (1992).
  98. F. F. Sizov, A. Rogalski, “Quantum well infrared optoelectronic devices,” Opto-Electronics Review No. 1, 3-9 (1993).
  99. A. Rogalski, “New trends in infrared detectors technology,” Opto-Electronics Review No. 3, 95-105 (1993).
  100. A. Rogalski, “HgZnTe and HgMnTe infrared detectors,” Opto-Electronics Review No. 1, 3-8 (1994).
  101. A. Rogalski, R. Ciupa, H. Zogg, “Computer modeling of carrier transport in PbSnSe photodiodes,” Infrared Phys. Technol. 35, 837-845 (1994).
  102. R. Ciupa, A. Rogalski, J. Rutkowski, J. Piotrowski, “Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes,” Opt. Eng. 33, 1434-1439 (1994).
  103. A. Rogalski, “New trends in semiconductor infrared detectors,” Optical Engineering 33, 1395-1412 (1994).
  104. A. Rogalski and K. Jóźwikowski, “GaAs/AlGaAs quantum well infrared photoconductors versus HgCdTe photodiodes for long wavelength infrared applications,” Opt. Eng. 33, 1477-1484 (1994).
  105. A. Rogalski, R. Ciupa, “Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures,” J. Appl. Phys. 77, 3505-3512 (1995).
  106. A. Rogalski, R. Panowicz, “GaAs/AlGaAs quantum well infrared detectors among the other types of semiconductor infrared detectors,” Proc. SPIE 2373, 361-375 (1994).
  107. J. Rutkowski, A. Rogalski, “LWIR p+-n photodiodes fabricated with HgCdTe bulk material,” Proc. SPIE 2373, 376-380 (1994).
  108. V.V. Tetyorkin, J. Rutkowski, A. Rogalski, F.F. Sizov, “Characterization of p-on-n HgCdTe diffusion photodiodes,” Proc. SPIE 2373, 382-387 (1994).
  109. A. Rogalski, R. Ciupa and H. Zogg, “Computer modeling of carrier transport in binary lead salt photodiodes,” Proc. SPIE 2373, 172-181 (1994).
  110. A. Rogalski, R. Ciupa, “Long wavelength n+-on-p HgCdTe photodiodes: Theoretical predictions and experimental data,” Proc. SPIE 2552, 392-403 (1995).
  111. X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, “Photovoltaic effects in GaN structures with p-n junctions,” Appl. Phys. Lett. 67, 2028-2030 (1995).
  112. P. Kung, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski, M. Razeghi, “Kinetics of photoconductivity in n-type GaN photodetector,” Appl. Phys. Lett. 67, 3792-3794 (1995).
  113. A. Rogalski, R. Ciupa, W. Larkowski, “Near room-temperature InAsSb photodiodes: theoretical predictions and experimental data,” Solid-State Electronics 39, 1593-1600 (1996).
  114. A. Rogalski, R. Ciupa, “Theoretical modeling of long wavelength n+-on-p HgCdTe photodiodes,” J. Appl. Phys. 80, 2483-2489 (1996).
  115. M. Razeghi, A. Rogalski, “Semiconductor ultraviolet detectors,” Proc. SPIE 2685, 114-125 (1996.
  116. J. Piotrowski, A. Rogalski, “Comment on “Temperature limits on infrared detectivities of InAs/InxGa1-xSb superlltices and bulk Hg1-xCdxTe” [J. Appl. Phys. 74, 4774 (1993)],” J. Appl. Phys. 80(4), 2542-2544 (1996).
  117. M. Razeghi, A. Rogalski, “AlGaN ultraviolet detectors,” Proc. SPIE 2999, 275-286 (1997).
  118. A. Rogalski, “Thermal detectors – background in infrared technology,” Opto-Electr. Rev. 5, 55-58 (1997).
  119. A. Rogalski, R. Ciupa, “PbSnTe photodiodes: theoretical predictions and experimental data,” Opto-Electr. Rev. 5, 21-29 (1997).
  120. A. Rogalski, “Infrared thermal detectors versus photon detectors: I. Pixel performance,” Proc. SPIE 3182, 14-25 (1997).
  121. A. Rogalski, “Infrared photovoltaic detectors,” Opto-Electr. Rev. 5, 205-216 (1997).
  122. R. Ciupa, A. Rogalski, “Performance limitations of photon and thermal infrared detectors,” Opto-Electr. Rev. 5, 257-266 (1997).
  123. J. Małachowski, A. Rogalski, “GaN ultraviolet photodiodes – photoresponse modeling,” J. Tech. Phys. 38, 65-72 (1997).
  124. A. Rogalski, R. Ciupa, “Comparison of the performance of quantum well and conventional bulk infrared photodetectors,” Proc. SPIE 3122, 327-338 (1997).
  125. A. Rogalski,”Comparison of the performance of quantum well and conventional bulk infrared photodetectors,” Infrared Phys. Technol. 38, 327-338 (1997).
  126. A. Rogalski, “Infrared thermal detectors versus photon detectors: II. Focal plane arrays,” Proc. SPIE 3179, 224-234 (1997).
  127. A. Rogalski, “Infrared photon detectors versus thermal detectors,” in Physics of Semiconductor Devices, pp. 754-761, edited by V. Kumar and S.K. Agarwal, Narosa Publishing House, New Delhi, 1998.
  128. A. Rogalski, M. Razeghi, “Narrow gap semiconductor photodiodes,” Proc. SPIE 3287, 2-13 (1998).
  129. M. Małachowski, A. Rogalski, “Comparison of GaN Schottky barrier and p-n junction photodiodes,” Proc. SPIE 3287, 206-213 (1998).
  130. J. Rutkowski, K. Adamiec, A. Rogalski, “RF magnetron sputtering deposition CdTe passivation of HgCdTe,” Proc. SPIE 3287, 327-335 (1998).
  131. M.J. Małachowski, A. Rogalski, “Photoresponse of GaN p-n junction and Schottky barrier ultraviolet photodetectors,” Opto-Electr. Rev. 6, 141-149 (1998).
  132. J. Piotrowski, A. Rogalski, “New generation of infrared photodetectors,” Sensors and Actuators A67, 146-152 (1998).
  133. A. Rogalski, “HgCdTe photodiodes versus quantum well infrared photoconductors for long wavelength focal plane arrays,” Opto-Electr. Rev. 6, 279-294 (1998).
  134. A. Rogalski, “Assessment of HgCdTe photodiodes and quantum well infrared photoconductorts for long wavelength focal plane arrays,” Infrared Phys. Technol. 40, 279-294 (1999).
  135. A. Rogalski, R. Ciupa, “Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes,” J. Electron. Mater. 28, 630-636 (1999).
  136. A. Rogalski, R. Ciupa, “InGaAs versus HgCdTe for short wavelength infrared applications,” Proc. SPIE 3629, 328-337 (1999).
  137. J. Rutkowski, A. Rogalski, K. Adamiec, “HgCdTe photodiode passivated with a wide band gap epitaxial layer,” Proc. SPIE 3629, 416-423 (1999).
  138. K. Jóźwikowski, J. Piotrowski, K. Adamiec, A. Rogalski, “Computer simulation of HgCdTe photovoltaic devices based on complex heterostructures,” Proc. SPIE 3629, 74-80 (1999).
  139. K. Adamiec, J. Rutkowski, A. Rogalski, L. Kubiak, “Comparison of mercury cadmium telluride LPE layers growth from Te-rich solution on (111)Cd0.95Zn0.05Te and (211)Cd0.95Zn0.05Te,” Proc. SPIE 3629, 88-97 (1999).
  140. A. Rogalski, “Assessment of HgCdTe photodiodes and quantum well infrared photoconductorts for long wavelength focal plane arrays,” Proc. SPIE 3890, 10-21 (2000).
  141. A. Rogalski, “Heterostructure infrared photovoltaic detectors,” Infrared Phys. Technol. 41, 213-238 (2000).
  142. A. Rogalski, “Infrared detectors at the beginning of the next millennium,” Sensors & Materials 12, 233-288 (2000).
  143. A. Rogalski, “Heterostructure infrared photodiodes,” Semiconductor Physics, Quantum Electronics & Optoelectronics 3, 111-120 (2000).
  144. K. Adamiec, J. Rutkowski, A. Rogalski, W. Gawron, J. Wenus, “LPE growth Hg1-xCdxTe heterostructures using a novel tipping boat,” Proc. SPIE 3948, 382-388 (2000).
  145. A. Rogalski, “Nowe tendencje w rozwoju detektorów promieniowania elektromagnetycznego,” Postępy Fizyki 51, 57-68 (2000).
  146. A. Rogalski, “Ostatnia dekada XX wieku w rozwoju detektorów promieniowania elektromagnetycznego,” Aparatura Badawcza i Dydaktyczna 5, 74-91 (2000).
  147. A. Rogalski, “Dual-band infrared detectors,” Proc. SPIE 3948, 17-30 (2000).
  148. W. Gawron, K. Adamiec, K. Jóźwikowski, A. Rogalski, “High sensitivity 8-14-µm HgCdTe photodetectors operated at ambient temperature,” Proc. SPIE 3948, 94-103 (2000).
  149. A. Rogalski, “Dual-band infrared focal plane arrays,” Proc. SPIE 4340, 1-14 (2000).
  150. K. Jóźwikowski, A. Rogalski, “Effect of dislocations on performance of LWIR HgCdTe photodiodes,” J. Electron. Mater. 29, 736-741 (2000).
  151. A. Rogalski, “Dual-band infrared detectors,” J. Infrared & Millimeter Waves 19, 241-258 (2000).
  152. K. Jóźwikowski, A. Rogalski, “Computer modeling of dual-band HgCdTe photovoltaic detectors,” J. Appl. Phys. 90, 1286-1291 (2001).
  153. J. Wenus, J. Rutkowski, A. Rogalski, “Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes,” IEEE Trans. Electron Devices 48, 1326-1332 (2001).
  154. A. Rogalski, “Infrared detectors at the beginning of the next millennium.” Opto-Electronics Review 9, 173-187 (2001).
  155. A. Rogalski, “Heterostructure HgCdTe photovoltaic detectors,” Proc. SPIE 4355, 1-14 (2001).
  156. A. Rogalski, “Infrared detectors at the beginning of the next millennium.” Proc SPIE 4413, 307-332 (2001).
  157. J. Wenus, J. Rutkowski, A. Rogalski, “Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes,” Proc. SPIE 4288, 335-344 (2001).
  158. W. Gawron, K. Adamiec, A. Rogalski, “HgCdTe buried multiple photodiodes fabricated by liquid phase epitaxy,” Proc. SPIE 4288, 354-361 (2001).
  159. A. Rogalski, “Comparison of performance limits of infrared detector materials,” Proc. SPIE 4650, 117-127 (2002).
  160. K. Jóźwikowski, A. Rogalski, A. Jóźwikowska, “Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe heterostructure devices,” J. Electron. Mater. 31, 677-682 (2002).
  161. A. Rogalski, K. Chrzanowski, “Infrared devices and techniques,” Opto-Electron. Rev. 10, 111-136 (2002).
  162. A. Rogalski, “Infrared detectors: An overview” Infrared Physics and Technology 43, 187-210 (2002).
  163. W. Gawron, A. Rogalski, “HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy.” Infrared Physics and Technology 43, 157-163 (2002).
  164. J. Wenus, J. Rutkowski, A. Rogalski, “Surface leakage current in HgCdTe photodiodes,” Proc. SPIE 4650, 250-258 (2002).
  165. A. Rogalski, “HgCdTe infrared detectors – historical prospect,” Proc. SPIE 4999, 431-442 (2003).
  166. J. Wenus, J. Rutkowski, A. Rogalski, “Analysis of VLWIR HgCdTe photodiode performance,” Proc. SPIE 5136, 396-404 (2003).
  167. R. Sewell, C.A. Musca, J.M. Dell, L. Faraone, K. Jóźwikowski, A. Rogalski, “Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures,” J. Electron. Mater. 32, 639-645 (2003).
  168. L. Kubiak, P. Madejczyk, J. Wenus, W. Gawron, K. Jóźwikowski, J. Rutkowski, A. Rogalski, “Status of HgCdTe photodiodes at the Military University of Technology,” Opto-Electron. Rev. 11, 211-226 (2003).
  169. A. Rogalski, “Quantum well infrared photoconductors in infrared detectors technology,” International Journal of High Speed Electronics and Systems 12, 593-658 (2003).
  170. A. Rogalski, “Tretie pokolenije IK-prijomnikov na baze HgCdTe, Czaść I” Prikladnaja Fizyka No 4, 54-64 (2003).
  171. A. Rogalski, “Tretie pokolenije IK-prijomnikov na baze HgCdTe, Czaść II” Prikladnaja Fizyka No 5, 69 (2003).
  172. A. Rogalski, “Competition of infrared detector technologies,” Proc. SPIE 5065, 23-38 (2003).
  173. A. Rogalski, “Quantum well infrared photoconductors in infrared detectors technology,” Proc. SPIE 5126, 141-152 (2003).
  174. Z. Jankiewicz, A. Jeleński, A. Rogalski, W. Woliński, “Bliżej gospodarki,” Sprawy Nauki, No. 5, 8 (2003).
  175. J. Wenus, J. Rutkowski, A. Rogalski, “Analysis of VLWIR HgCdTe photodiode performance,” Proc. SPIE 5136, 396-404 (2003).
  176. L. Kubiak, J. Wenus, J. Rutkowski, A. Rogalski, “LPE growth of Hg1-xCdxTe heterostructure,” in Crystal Growth and Epitaxy, pp. 141-153, edited by M. Herman, Vienna, 2003.
  177. A. Rogalski, J. Rutkowski, “Crystalline materials for optoelectronics,” III-Vs Review, 16(6), 43-47 (2003).
  178. A. Rogalski, “Detektory fotonowe w Polsce – stan i perspektywy rozwoju,” conference Optoelektronika 2003, Poznań, 11-12 June 2003.
  179. L. Kubiak, J. Wenus, J. Rutkowski, A. Rogalski, “Technologia heterozłączowych fotodiod z HgCdTe na zakres 8-16 µm pracujących w temperaturze ciekłego azotu,” conference Optoelektronika 2003, Poznań, 11-12 June 2003.
  180. A. Rogalski, “Third-generation infrared photon detectors,” Opt. Eng. 42, 3498-3516 (2003).
  181. A. Rogalski, “Toward third generation HgCdTe infrared detectors,” J. Alloys and Compounds 371, 53-57 (2004).
  182. A. Rogalski, “Optical detectors for focal plane arrays,” Opto-Electron. Rev. 12, 221-245 (2004).
  183. A. Rogalski, “Advanced technologies in development of optical detectors,” Elektronika, No. 12, 12-19 (2004).
  184. A. Rogalski, Z. Bielecki, “Detection of optical radiation,” Bull. Pol. Ac.: Tech. 52, 43-66 (2004).
  185. J. Piotrowski, A. Rogalski, “Uncooled long-wavelength infrared photon detectors,” Proc. SPIE 5359, 10-22 (2004).
  186. A. Jóźwikowska, K. Jóźwikowski, J. Rutkowski, Z. Orman, A. Rogalski, “Generation-recombination effects in high temperature HgCdTe heterostructure photodiodes,” Opto-Electron. Rev. 12, 417-428 (2004).
  187. J. Piotrowski, A. Rogalski, “Uncooled long wavelength infrared photon detectors,” Infrared Physics & Technol. 46, 115-131 (2004).
  188. A. Rogalski, “InAs/GaInSb superlatticesa as a promising material system for third generation infrared detectors,” Proc. SPIE 5834, 1-12 (2005).
  189. A. Piotrowski, P. Madejczyk, W. Gawron, K. Kłos, J. Pawluczyk, M. Grudzień, J. Piotrowski, A. Rogalski, “MOCVD HgCdTe heterostructures for uncooled infrared photodetectors,” Proc. SPIE 5732, 273-284 (2005).
  190. A. Piotrowski, P. Madejczyk, W. Gawron, K. Kłos, J. Pawluczyk, M.Grudzień, J. Piotrowski, A. Rogalski, “Growth of MOCVD HgCdTe heterostructures for uncooled infarerd photodetectors,” Bull. Pol. Ac.: Tech. 53, 139-149 (2005).
  191. P. Madejczyk, A. Piotrowski, W. Gawron, K. Kłos, J. Pawluczyk, J. Rutkowski, J. Piotrowski, A. Rogalski, “Growth and properties of MOCVD HgCdTe epilayers on GaAs substrates,” Opto-Electron. Rev. 13, 239-251 (2005).
  192. J. Rutkowski, A. Rogalski, J. Piotrowski, A. Piotrowski, “Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures,” Proc. SPIE 5957, 59571X-1-8 (2005).
  193. A. Piotrowski, W. Gawron, K. Kłos, J. Pawluczyk, J. Piotrowski, P. Madejczyk, A. Rogalski, “Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors,” Proc. SPIE 5957, 59570J-1-9 (2005).
  194. A. Rogalski, P. Martyniuk, “InAs/GaInSb superlattices as a promising material system for third generation infrared detectors,” Infrared Physics & Technol. 48, 39-52 (2006).
  195. A. Rogalski, “Competitive technologies for third generation infrared photon detectors,” Proc. SPIE 6206, 62060S-1-15 (2006).
  196. A. Rogalski, “Competitive technologies for third generation infrared photon detectors,” Opto-Electron. Rev. 14, 87-101 (2006).
  197. A. Piotrowski, P. Madejczyk, W. Gawron, K. Kłos, J. Pawluczyk, J. Rutkowski, J. Piotrowski, A. Rogalski: “Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors,” Infrared Physics & Technol. 49, 173-182 (2007).
  198.  A. Rogalski, “Material considerations for third generation infrared photon detectors,” Infrared Physics & Technol. 50, 240-252 (2007).
  199. K. Jóźwikowski, A. Rogalski, “Enhanced numerical analysis of three-color HgCdTe detectors,” Proc. SPIE 6542, 6542-1-11(2007).
  200. K. Jóźwikowski, A. Rogalski, “Numerical analysis of three-colour HgCdTe detectors,” Opto-Electron. Rev. 15, 215-222 (2007).
  201. P. Martyniuk, A. Rogalski, “Comparison of performance of quantum dot and other types infrared photodetectors,” Proc. SPIE 6940, 6940-1-10 (2008).
  202.  J. Rutkowski1, P. Madejczyk1, A. Piotrowski, W. Gawron, K. Jóźwikowski, A. Rogalski, “Two-colour HgCdTe infrared detectors operating above 200 K,” Opto-Electron. Rev. 16, 321-327 (2008).
  203. P. Martyniuk, S. Krishna, A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104, 034314-1-6 (2008).
  204. A. Rogalski, “New material systems for third generation infrared photodetectors,” Opto-Electron. Rev. 16, 458-482 (2008).
  205. P. Martyniuk, A. Rogalski, “Insight into performance of quantum dot infrared photodetectors,” Bull. Pol. Ac.: Tech. 57, 103-116 (2009).
  206. A. Rogalski, “Insight on quantum dot infrared photodetectors,” Journal of Physics: Conference Series 146, 012030-1-10 (2009).
  207. A. Rogalski, “Infrared detectors for the future,” Acta Phys. Pol. A 116, 389-406 (2009).
  208. K. Jóźwikowski, J. Piotrowski, W. Gawron, A. Rogalski, A. Piotrowski, J. Pawluczyk, A. Jóźwikowska, J. Rutkowski, M. Kopytko, “Generation-recombination effect in high temperature HgCdTe heterostructure non-equilibrium photodiodes,” J. Electron. Mater. 38, 1666-1676 (2009).
  209. P. Madejczyk, A. Piotrowski, K. Kłos, W. Gawron, A. Rogalski, J. Rutkowski, W. Mróz, “Surface smoothness improvement of HgCdTe layers grown by MOCVD,” Bull. Pol. Ac.: Tech. 57, 173-180 (2009).
  210. A. Rogalski, “Outlook on quantum dot infrared photodetectors,” Information Optics 18(3), 234-252 (2009).
  211. A. Rogalski, “HgTe-based photodetectors in Poland,” Proc. SPIE 7298, 72982Q (2009).
  212. P. Madejczyk, A. Piotrowski, W. Gawron, K. Kłos, A. Rogalski, J. Rutkowski, “Morphology issues of HgCdTe samples grown by MOCVD,” Proc. SPIE 7298, 729825-1-10 (2009).
  213. J. Wróbel, R. Ciupa, A. Rogalski, “Performance limits of room-temperature InAsSb photodiodes,” Proc. SPIE 7660, 766033-1-9 (2010)
  214. A. Rogalski, “Novel uncooled infrared detectors,” Opto-Electron. Rev. 18, 478-492 (2010).
  215. A. Rogalski, “History of HgTe-based photodetectors in Poland,” Opto-Electron. Rev. 18, 284-294 (2010).
  216. P. Madejczyk, A. Piotrowski, K. Kłos, W. Gawron, J. Rutkowski, A. Rogalski, “Control of acceptor doping in MOCVD HgCdTe epilayers,” Opto-Electron. Rev. 18, 271-276 (2010).
  217. A. Rogalski, “Recent progress in third generation infrared detectors,” J. Modern Optics 57(18), 1716-1730 (2010).
  218. K. Jóźwikowski, M. Kopytko, A. Rogalski, A. Jóźwikowska, “Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes,” J. Appl. Phys. 108, 074519-1-11 (2010).
  219. K. Jóźwikowski, M. Kopytko, A. Rogalski, “Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes,” Bull. Pol. Ac.: Tech. 58, 523-533 (2010).
  220. P. Madejczyk, W. Gawron, A. Piotrowski, K. Kłos, J. Rutkowski, A. Rogalski, “Improvement in performance of high-operating temperature HgCdTe photodiodes,” Infrared Phys.&Technol. 54, 310-315 (2011).
  221. A. Rogalski, “Recent progress in infrared detector technologies,” Infrared Phys.&Technol. 54, 136-154 (2011).
  222. K. Jóźwikowski, M. Kopytko, A. Rogalski, “Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-µm n-on-p HgCdTe photodiodes”, Opt. Eng. 50(6): 061003 (2011).
  223. K. Jóźwikowski, M. Kopytko, J. Piotrowski, A. Jóźwikowska, Z. Orman, A. Rogalski, “Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley-Read-Hall centers”, Solid-State Electron. 63(1): 8-13 (2011).
  224. K. Jóźwikowski, A. Jóźwikowska, M. Kopytko, A. Rogalski, L.R. Jaroszewicz, “Simplified model of dislocations as a SRH recombination channel in the HgCdTe heterostructures,” Infrared Phys. & Technol. 55, 98-107 (2012).
  225. A. Rogalski, “Progress in focal plane array technologies,” Prog. Quantum Electron. 36, 342-473 (2012).
  226. K. Jóźwikowski, M. Kopytko, and A. Rogalski, “Numerical estimations of carrier generation-recombination processes and the photon recycling effect in HgCdTe heterostructure photodiodes,” J. Electr. Mater. 41, 2766-2774 (2012).
  227. P. Martyniuk, J. Wróbel, E. Plis, P. Madejczyk, A. Kowalewski, W. Gawron, S. Krishna, A. Rogalski, “Performance modeling of MWIR InAs/GaSb/B-Al0.2Ga0.8Sb type-II superlattice nBn detector,” Semicon. Sci. Technol. 27(5), doi:10.1088/0268-1242/27/5/055002 (2012).
  228. K. Jóźwikowski, M. Kopytko, A. Rogalski, “The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys,” J. Appl. Phys. 112(3), 033718 (2012).
  229. A. Rogalski, “History of infrared detectors,” Opto-Electron. Rev. 20(3), 279-308 (2012).
  230. A. Rogalski, “Semiconductor detectors and focal plane arrays for far-infrared imaging,” Opto-Electron. Rev. 21(4), 406-426 (2014).
  231. M. Kopytko, K. Jozwikowski, P. Madejczyk, W. Pusz and A. Rogalski, “Analysis of the response time in high-temperature LWIR HgCdTe photodiodes operating in non-equilibrium mode”, Infrared Phys. & Technol. 61, 162-166 (2013).
  232. P. Martyniuk, W. Gawron, and A. Rogalski, “Theoretical modeling of HOT HgCdTe barrier detectors for the mid-wave infrared range,” J. Electron. Materials 42, 3309-3319 (2013).
  233. P. Madejczyk, W. Gawron, P. Martyniuk, A. Keblowski, A. Piotrowski, J. Pawluczyk, W. Pusz, A. Kowalewski, J. Piotrowski, and A. Rogalski, “MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors,” Semicon. Sci. Technol. 28(10), 105017 (2013).
  234. P. Martyniuk, J. Wrobel, E. Plis, P. Madejczyk, W. Gawron, A. Kowalewski, S. Krishna, and A. Rogalski, “Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors,” Opt. Eng. 52(6) 061307 (2013).
  235. P. Martyniuk and A. Rogalski, “HOT infrared detectors,” Opto-Electron. Rev. 21(2) 239-257 (2013).
  236. L. Czarnecki, M.P. Kazmierkowski, and A. Rogalski, “Doing Hirsch proud; shaping H-index in engineering sciences,” Bull. Pol. Ac.: Tech. 61(1), 5-21 (2013).
  237. P. Martyniuk and A. Rogalski, “Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector,” Bull. Pol. Ac.: Tech. 61(1), 211-220 (2013).
  238. P. Martyniuk and A. Rogalski, “Modelling of MWIR HgCdTe complementary barrier HOT detector,” Solid-State Electron. 80, 96-104 (2013).
  239. P. Martyniuk, W. Gawron, P. Madejczyk, A. Rogalski, and J. Piotrowski, “Modeling of HgCdTe LWIR detector for high operation temperature conditions,” Metrology and Measurement Systems 20, 159-170 (2013).
  240. P. Martyniuk and A. Rogalski, “Modeling of InAsSb/AlAsSb nBn HOT detector’s performance limit,” Proc. SPIE 8704, 87041X (2013).
  241. W. Pusz, A. Kowalewski, W. Gawron, E. Plis, E.); S. Krishna, A. Rogalski, “MWIR type-II InAs/GaSb superllatice interband cascade photodetectors,” Proc. SPIE 8868, 88680M (2013).
  242. L. Ciura, A. Kolek, Z. Zawislak, A.W. Stadler, A. Kowalewski, P. Martyniuk, J. Wrobel, A. Rogalski, N. Gautam, E. Plis, and S. Krishna, “Low-frequency noise in type-II superlattice MWIR nBn detector,” 22nd International Conference on Noise and Fluctuations, ICNF 2013; Montpellier; 24-28 June, 2013.
  243. A. Rogalski, “Semiconductor detectors and focal plane arrays for far-infrared imaging,” Opto-Electron. Rev. 21(4), 406-426 (2013).
  244. M. Kopytko, J. Wróbel, K. Jóźwikowski, A. Rogalski, J. Antoszewski, N.D. Akhavan, G.A. Umana-Membreno, L. Faraone, and C.R. Becker, “Engineering the bandgap of unipolar HgCdTe-based nBn infrared photodetectors,” J. Electron. Mater. 44(1), 158-166 (2014).
  245. P. Martyniuk and A. Rogalski, “Performance comparison of barrier detectors and HgCdTe photodiodes,” Proc. SPIE 9070, 907014 (2014).
  246. A. Rogalski, “New trends in infrared and terahertz detectors,” 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Article number 7038694, p. 218-220, 14?17 December, Perth, 2014.
  247. P. Martyniuk, W. Gawron, A. Kowalewski, E. Plis, S. Krishna, and A. Rogalski, “XBn and cascade infrared detectors for mid-wave range and HOT conditions,” Journal of Optoelectronics and Advanced Materials 16(9/10), 1071-1082 (2014).
  248. P. Martyniuk and A. Rogalski, “Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector,” Optical and Quantum Electronics 46(4), 581-591 (2014).
  249. J. Wróbel, E. Plis, W. Gawron, M. Motyka, P. Martyniuk, P. Madejczyk, A. Kowalewski, M. Dyksik, J. Misiewicz, S. Krishna, and A. Rogalski, “Analysis of temperature dependence of dark current mechanisms in mid-wavelength infrared pin type-II superlattice photodiodes,” Sensors and Materials 26(4), 235-244 (2014).
  250. P. Martyniuk, M. Kopytko, and A. Rogalski, “Barrier infrared detectors,” Opto-Electron. Rev. 24(2), 127-146 (2014).
  251. P. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, and A. Rogalski, “Modeling of HOT (111) HgCdTe MWIR detector for fast response operation,” Optical and Quantum Electronics 46(10), 1303-1312 (2014).
  252. M. Kopytko, K. Jóźwikowski, and A. Rogalski, “Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode,” Solid-State Electronics 100, 20-26 (2014).
  253. P. Martyniuk, W. Gawron, D. Stanaszek, W. Pusz, and A. Rogalski, “Theoretical modelling of mercury cadmium telluride mid-wave detector for high temperature operation,” IET Optoelectronics 8(6), 239-244 (2014).
  254. P. Martyniuk, W. Pusz, W. Gawron, D. Stępień, L. Kubiszyn, S. Krishna, and A. Rogalski, “NBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation,” 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Article number 7038697, p. 226-229, 14-17 December, Perth, 2014.
  255. W. Pusz, A. Kowalewski, P. Martyniuk, W. Gawron, E. Plis, S. Krishna, and A. Rogalski, “Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors,” Opt. Eng. 53(4), Article number 043107 (2014).
  256. P. Martyniuk, A. Koźniewski, A. Kębłowski, W. Gawron, and A. Rogalski, “MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions,” Opto-Electron. Rev. 22(2), 118-126 (2014).
  257. P. Martyniuk and A. Rogalski, “Mid-wavelength infrared nBn for HOT detectors,” J. Electron. Mater. 43(8) 2963-2969 (2014).
  258. P. Martyniuk and A. Rogalski, “Performance comparison of barrier detectors and HgCdTe photodiodes,” Opt. Eng. 53(10), Article number 106105 (2014).
  259. M. Kopytko, A. Kębłowski, W. Gawron, A. Kowalewski, and A. Rogalski, “MOCVD grown HgCdTe barrier structures for hot conditions,” IEEE Trans. Electron Devices 61(11), 3803-3807 (2015).
  260. M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, and A. Rogalski, “MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation,” Proc. SPIE 9451, Article number 945117 (2015).
  261. P. Martyniuk and A. Rogalski, “MWIR barrier detectors versus HgCdTe photodiodes,” Infrared Phys. & Technol. 70(1), 125-128 (2015).
  262. L. Ciura, A. Kolek, J. Wrobel, W. Gawron, and A. Rogalski, “1/f noise in mid-wavelength infrared detectors with InAs/GaSb superlattice absorber,” IEEE Trans. Electron Devices 62(6), 2022-2026 (2015).