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Antoni ROGALSKI, Ph.D., D.Sc.


Ordinary Member PAN
Professor of the Institute of Applied Physics
Military University of Technology
2 Kaliskiego Str., 00-908 Warsaw, Poland
Tel./Fax. (48) 261 839 109
antoni.rogalski@wat.edu.pl

Invited plenary talks at international conferences

  1. A. Rogalski, “Intrinsic infrared detectors,” Seminar on Modern Epitaxy Technologies, pp. 111-138, 1-3 November, Plovdiv, 1988.
  2. A. Rogalski, “New ternary alloy systems for infrared detectors,” Proceedings of the 1st International Workshop on Advanced Infrared Technology and Applications, Firenze, 13-14 April, 1992, edited by G.M. Carlomagno and C. Corsi, Fondazione Giorgio Ronchi, LXV, pp. 9-28, Firenze, 1993.
  3. A. Rogalski, “New ternary alloy systems for infrared detectors,” Liquid and Solid State Crystals: Physics, Technology and Applications, Zakopane, 12-17 October, 1992; Proc. SPIE 1845, 52-60 (1993).
  4. A. Rogalski, “New trends in infrared detectors technology,” Proceedings of the 2nd Workshop on Advanced Infrared Technology and Applications, Casa Malaparte – Capri, 20-21 September, 1993, edited by R. Abbozzo, ATTI Della “Fondazione Giorgio Ronchi”, IL, No. 1, pp. 1-32, Firenze, 1994.
  5. A. Rogalski, “Quantum well infrared photodetectors among the other types of semiconductor infrared detectors,” Proceedings of the 3rd Workshop on Advanced Infrared Technology and Applications, Casa Malaparte – Capri, 19-20 September, 1995, edited by R. Abbozzo, ATTI Della “Fondazione Giorgio Ronchi”, LI, No. 1-2, pp. 49-69, Firenze, 1996.
  6. A. Rogalski, “Infrared thermal detectors versus photon detectors: I. Pixel performance,” Material Science and Material Properties for Infrared Optoelectronics, Uzhgorod, 30 September-2 October; Proc. SPIE 3182, 14-25 (1997).
  7. M. Razeghi and A. Rogalski, “AlGaN ultraviolet detectors,” Photodetectors: Materials and Devices (Photonics West), San Jose, 12-14 January, 1996; Proc. SPIE 2999, 275-286 (1996).
  8. A. Rogalski, “Infrared thermal detectors versus photon detectors: II. Focal plane arrays,” Solid State Crystals: Material Science and Applications, Zakopane, 7-11 October, 1996; Proc. SPIE 3179, 224-234 (1997).
  9. A. Rogalski, “Infrared photon detectors versus thermal detectors. Fundamental limitations, Proceedings of the 4th International Workshop on Advanced Infrared Technology and Applications, Firenze, 15-16 September, 1997, edited by R. Abbozzo, ATTI Della “Fondazione Giorgio Ronchi”, LIII, No. 1-3, pp. 27-43, Firenze, 1998.
  10. A. Rogalski and M. Razeghi, “Narrow gap semiconductor photodiodes,” Photodetectors: Materials and Devices (Photonics West), San Jose, 28-30 January, 1997; Proc. SPIE 3287, 2-13 (1997).
  11. J. Piotrowski and A. Rogalski, “New generation of infrared photodetectors,” The International Conference on Solid-State Sensors and Actuators EUROSENSORS XI, Warsaw, 21-24 September, 1997; Sensors and Actuators A67, 146-152 (1998).
  12. A. Rogalski, “Infrared photon detectors versus thermal detectors,” Ninth International Workshop on Physics of Semiconductor Devices, 14-19 December, 1997, Delhi; Physics of Semiconductor Devices, pp. 754-761, edited by V. Kumar and S.K. Agarwal, Narosa Publishing House, New Delhi, 1998.
  13. A. Rogalski, “Heterostructure devices in infrared detector technology,” Advanced Workshop on “Frontiers in Electronics”, Villard de Lans (w pobliżu Grenoble), 29 May – 5 June, 1999.
  14. A. Rogalski and R. Ciupa, “InGaAs versus HgCdTe for short wavelength infrared application,” Photodetectors: Materials and Devices IV (Photonic West), San Jose, 27-29 January, 1999; Proc. SPIE 3629, 328-337 (1999).
  15. A. Rogalski, “Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays,” Material Science and Material Properties for Infrared Optoelectronics, Kiev, 29 September – 2 October, 1998; Proc. SPIE 3890, 10-21 (1999).
  16. A. Rogalski, “Performance limitation of InGaAs photodiodes,” International Conference on Solid State Crystals, Zakopane, 12-16 October, 1998; Proc. SPIE 3725, 260-269 (1999).
  17. A. Rogalski, “Dual-band infrared detectors,” Photodetectors: Materials and Devices V (Photonics West), San Jose, 26-28 January, 2000; Proc. SPIE 3948, 17-30 (2000).
  18. A. Rogalski, “Dual-band infrared focal plane arrays,” 16th International Conference on Photoelectronics and Night Vision Devices, Moscow, 25-27 May, 2000; Proc. SPIE 4340, 1-14 (2000).
  19. A. Rogalski, “Heterostructure HgCdTe photovoltaic detectors,” Material Science and Material Properties for Infrared Optoelectronics, Kiev, 22-24 May, 2000; Proc. SPIE 4355, 1-14 (2001).
  20. A. Rogalski, “Infrared detectors at the beginning of the next millennium,” International Conference on Solid State Crystals, Zakopane, 9-13 October, 2000; Proc. SPIE 4413, 307-322 (2001).
  21. A. Rogalski, “Competition of infrared detector technologies,” Material Science and Material Properties for Infrared Optoelectronics, Kiev, 22-24 May, 2002; Proc. SPIE 5065, 23-38 (2003).
  22. A. Rogalski, “Quantum well infrared photoconductors in infrared detectors technology,” 17th International Conference on Photoelectronics and Night Vision Devices, Moscow, 27-31 May, 2002; Proc. SPIE 5126, 141-152 (2003).
  23. A. Rogalski, “Toward third generation HgCdTe infrared detectors,” E-MRS Fall Meeting 2002: Symposium on Solid Solutions of the II-VI Compounds – Growth, Characterisation and Application, Zakopane, 14-18 October, 2002; J. Alloys and Compounds 371, 53-57 (2004).
  24. L. Kubiak, J. Wenus, J. Rutkowski, and A. Rogalski, “LPE growth of Hg1-xCdxTe heterostructures,” Review Conference on Crystal Growth and Epitaxy, Vienna, 20-24 October, 2002.
  25. A. Rogalski, “HgCdTe infrared detectors – historical prospect,” Quantum Sensing: Evolution and Revolution from Past to Future (Photonics West), 27-30 January, 2003, San Jose, California; Proc. SPIE 4999, 431-442 (2003).
  26. J. Piotrowski, A. Rogalski, “Uncooled long wavelength infrared photon detectors,” 7th International Workshop on Advanced Infrared Technology and Applications, 9-11 September, 2003, Pisa, Italy.
  27. J. Piotrowski, A. Rogalski, “Uncooled longwavelength infrared photon detectors,”Quantum Sensing and Nanophotonic Devices (Photonics West), 25-29 January, 2004, San Jose, California; Proc. SPIE 5359 (2004).
  28. A. Rogalski, “InAs/GaInSb superlattices as a promising material system for third generation infrared detectors,” 18th International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices, Moscow, 25-28 May, 2004, Moscow, Russia.
  29. A. Rogalski, “InAs/GaInSb superlattices as a promissing material system for third generation infrared focal plane arrays,” 6th International Conference “Mid-Infrared Optoelectronics Materials and Devices“, June 28 – July 2, 2004, St Petersburg, Russia.
  30. A. Piotrowski, P. Madejczyk, W. Gawron, K. Kłos, J. Pawluczyk, M. Grudzień, J. Piotrowski, and A. Rogalski “MOCVD HgCdTe heterostructures for uncooled infrared photodetectors,” Quantum Sensing and Nanophotonic Devices II (Photonics West), 22-27 January, 2005, San Jose, California; Proc. SPIE 5732 (2005).
  31. A. Rogalski, “MOCVD HgCdTe heterostructures for uncooled infrared photodetectors,” AITA 2005. Advanced Infrared Technology and Applications, Roma, 7-9 September, 2005.
  32. A. Rogalski, “Competitive technologies of third generation infrared photon detectors,” Defense and Security Symposium, Orlando, 17-21 April, 2006.
  33. A. Rogalski, “Material considerations for third generation photon detectors,” International Workshop on Quantum Well Infrared Photodetectors, Kandy, Sri Lanka, 18-24 June, 2006
  34. A. Rogalski, “Third generation infrared detectors,” Symposium on Photonics Technologies for Framework Programme 7, Wrocław, 12-14 November, 2006.
  35. A. Rogalski, “Uncooled long-wavelength infrared photon detectors,” International Review Conference on Semiconductor Optoelectronics, Vienna, 26-28 November, 2006.
  36. A. Rogalski, “New materials for third generation infrared detectors,” Six International Symposium on Quantum-Functional Semiconductors, Jeju island, Korea, 8-12 December, 2006.
  37. A. Rogalski, “Multicolour infrared detectors,” III Ukrainian Conference on Semiconductor Physics, Odessa, 17-22 June, 2007.
  38. A. Rogalski, “HgCdTe infrared detectors. Historical prospect,” Progress in Infrared Detector Technology, Perth, 21-23 November, 2007.
  39. A. Rogalski, “Comparison of performance of quantum dot and other types infrared photodetectors, Defense and Security Symposium, Orlando, 17-21 March, 2008.
  40. A. Rogalski, “Quantum-dot infrared photodetectors: Status and outlook,” Conference Photoelectronics and Night Vision Devices, 27-30 May, Moscow 2008.
  41. A. Rogalski, “Infrared detectors for the future,” 39th Freiburg Infrared Colloquium, 17-18 February, Freiburg, 2009.
  42. A. Rogalski,”HgTe-based photodetectors in Poland,” Defense and Security Symposium, Orlando, 13-17 April, 2009.
  43. A. Rogalski, “Low dimensional solids in multicolour infrared detector technology,” 5th Nonoscience and Nanotechnology Conference, Eskisehir, June 8-12, 2009.
  44. A. Rogalski, “Third-generation infrared photodetector arrays,” AITA 2009, 8-11 September, Florence 2009.
  45. A. Rogalski, “New material systems for third generation infrared photodetectors,” Correlation Optics, 20-24 September, Chernivtsi 2009.
  46. A. Rogalski, “Infrared detectors for the future,” The XV International Workshop on the Physics of Semiconductor Devices, December 15-19, New Delhi, 2009.
  47. A. Rogalski, “Recent progress in infrared detector technologies”, XXI International Scientific and Engineering Conference on Photoelectronics and Night Vision Devices, Moscow, 25-28 May, 2010.
  48. A. Rogalski, “Recent progress in third generation infrared detectors,” Quantum Structure Infrared Photodetector International Conference, Istambul, 15-20 August, 2010.
  49. A. Rogalski, “Low dimensional structures for infrared detectors,” International Conference on Semiconductor Mid-IR Materials and Optics, Warsaw, 21-23 October, 2010.
  50. A. Rogalski, “High temperature operation of type-II InAs/GaSb superlattice photodiodes,” Correlation Optics, 12-16 September, Chernivtsi 2011.
  51. A. Rogalski, “New infrared detector technologies,” Infrared: Science, Technology, and Applications, 23-25 May, Bad Honnef, 2012.
  52. A. Rogalski, “HgCdTe versus other material systems: a historical look,” Infrared Optoelectronics: Materials & Devices (MIOMD-XI), 4-8 September, Chicago, 2012.
  53. A. Rogalski, “Far-infrared semiconductor detectors and focal plane arrays,” Advanced THz Technologies for Civil and Military Security, 26-29 May, Kiev, 2013.
  54. A. Rogalski, “Novel infrared photodetectors,” Correlation Optics, 18-21 September, Chernivtsi 2013.
  55. P. Martyniuk, A. Rogalski, “Modeling of InAsSb/AlAsSb nBn HOT detector’s performance limit,” Defense and Security Symposium, Baltimore, 25 April – 3 May, 2013
  56. A. Rogalski, “Far-infrared semiconductor detectors and focal plane arrays,” Advanced THz Technologies for Civil and Military Security, 1-4 May, Kiev, 2013.
  57. A. Rogalski, A. Kowalewski, W. Pusz, W. Gawron, E. Plis, S. Krishna, “MWIR type-II InAs/GaSb superlattice cascade photodetectors,” Optics and Photonics, San Diego, 25-29 August, 2013.
  58. A. Rogalski, “New trends in infrared and terahertz detectors,” Masterclass, University of Western Australia, Perth, 20 October 2013.
  59. A. Rogalski, “Infrared barier detectors,” 15th Conference on Optical Fibers and Their Applications, Białystok, 29 January – 1 February 2014.
  60. P. Martyniuk, A. Rogalski, “Performance comparison of barrier detectors and HgCdTe photodiodes,” Defense and Security Symposium, Baltimore, 5-9 May, Baltimore, 2014.
  61. A. Rogalski, “New trends in infrared and terahertz detectors,” COMMAD 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December, Perth, 2014.
  62. M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, and A. Rogalski, “MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation,” Defense and Security Symposium, Baltimore, 20-24 April, Baltimore, 2015.
  63. A. Rogalski, “Type-II superlattice HOT infrared photodetectors,” 3rd International Workshop on Opportunities and Challenges in Mid-infrared Laser-based Gas Sensing, 5-7 March, Wurzburg 2015.
  64. A. Rogalski, “New concepts in infrared photodetector designs,” Microelectronics Technology, Circuits, and Systems for Space Applications Workshop, 15-17 June, Sabanci University, Istanbul 2015.
  65. M. Kopytko and A. Rogalski, “HgCdTe barrier infrared detectors,” 13th International Workshop on Advanced Infrared Technology and Applications (AITA 2015), 30 September – 2 October, Pisa 2015.
  66. A. Rogalski and P. Martyniuk, “MWIR nBn for HOT detectors”, U.S. Workshop on the Physics and Chemistry of II-VI Materials, Chicago, USA (2015).
  67. A. Kłębowski, W. Gawron, P. Martyniuk, D. Stępień, K. Kolwas, P. Madejczyk, M. Kopytko, A. Piotrowski, and A. Rogalski, “Progress in MOCVD growth of HgCdTe epilayers for infrared detectors”, Defense and Security Symposium, Baltimore, 17-21 April, Baltimore, 2016.
  68. A. Rogalski, “Antimonide-based infrared detectors – A new perspective”, The 2016 International Symposium on Reliability of Optoelectronics for Systems, 6-9 June, Otwock, 2016.
  69. A. Rogalski, “Antimonide-based infrared detectors – A new perspective”, The 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-XIII), 18-22 September, Beijing, 2016.
  70. A. Rogalski, “Interband cascade infrared detectors”, 3rd WORKshop on Infrared Technologies, 7-8 November, Olching, 2016.
  71. A. Rogalski, P. Martyniuk, “Recent progress in type-II superlattice infrared detectors”, XIX International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, India (2017).
  72. A. Rogalski, M. Kopytko, K. Jóźwikowski, and P. Martyniuk, “Influence of radiative recombination on performance of p-i-n HOT long wavelength infrared HgCdTe photodiodes”, SPIE Defense and Commerial Sensing, 15-19 April, Orlando, 2018.
  73. A. Rogalski, “Antimonide-based infrared detectors – A new perspective”, 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE  TeraTech-2018), 17-21 September 2018.
  74. A. Rogalski, “Next decade in infrared detectors”, Electro-Optical and Infrared Systems: Technology and Applications, 11-14 September, Warsaw, 2017
  75. A. Rogalski, “Infrared detectors in the next decade”, The 2018 U.S. Workshop on the Physics and Chemistry of II-VI Materials, 22-25 October, Pasadena, USA, 2018.
  76. A. Rogalski, P. Martyniuk M. Kopytko, “Type-II superlattice photodetectors versus HgCdTe photodiodes”, SPIE Remote Sensing, 9-12 September, Strasbourg, France, 2019.
  77. A. Rogalski, “2D materials in infrared detector family”, 5th EMN Carbon Nanostructures, 17-21 March, Honolulu, Hawaii, 2020
  78. A. Rogalski, “Trends in performance limits of HOT infrared photodetectors”, The 2020 U.S. Workshop on the Physics and Chemistry of II-VI Materials, 19-22 October, Tampa, USA, 2020.
  79. A. Rogalski, “2D materials for infrared and terahertz detectors”, MIKON 2020, 5-7 October, Warsaw, 2020.
  80. A. Rogalski, “Are 2D material photodetectors a viable competitor to HgCdTe photodiodes in the long-wave infrared spectral range?” The 2021 U.S. Workshop on the Physics and Chemistry of II-VI Materials, 25-28 October, Chicago, USA, 2021.
  81. A. Rogalski, “Trends in performance limits of HOT infrared photodetectors”, 10-15 July, QSIP 2022: Quantum Structure Infrared Photodetectors, Cracow, Poland, 2022.
  82. A. Rogalski, “Record-breaking performance of low-dimensional solid photodetectors” – Commentary”, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), 11-16 December, Adelaide, Australia, 2022.
  83. A. Rogalski, “Infrared HOT detectors in the next decade”, ESIT 2023: The Second International Conference on Earth & Space: from Infrared to Terahertz, 22-24 September, Shanghai 2023.
  84. A. Rogalski, “Overestimating the performance of photon detectors”, 6th Conference on Frontiers in Optical Imaging and Detecting Technology and Application (FOI 2023), 22-24 October, Nanjing 2023.